Nxp Semiconductors PBLS4004D User Manual
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
7 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
[1]
Pulse test: t
p
≤
300
µ
s;
δ ≤
0.02.
f
T
transition frequency
I
C
=
−
50 mA; V
CE
=
−
10 V;
f = 100 MHz
150
-
-
MHz
C
c
collector capacitance
V
CB
=
−
10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
12
pF
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current
current
V
CB
= 50 V; I
E
= 0 A
-
-
100
nA
I
CEO
collector-emitter
cut-off current
cut-off current
V
CE
= 30 V; I
B
= 0 A
-
-
1
µ
A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°
C
-
-
50
µ
A
I
EBO
emitter-base cut-off
current
current
V
EB
= 5 V; I
C
= 0 A
-
-
180
µ
A
h
FE
DC current gain
V
CE
= 5 V; I
C
= 5 mA
60
-
-
V
CEsat
collector-emitter
saturation voltage
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
150
mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100
µ
A
-
1.1
0.8
V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA
2.5
1.7
-
V
R1
bias resistor 1 (input)
15.4
22
28.6
k
Ω
R2/R1
bias resistor ratio
0.8
1
1.2
C
c
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
2.5
pF
Table 7.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit