Atmel ARM-Based Evaluation Kit AT91SAM9N12-EK AT91SAM9N12-EK Data Sheet
Product codes
AT91SAM9N12-EK
431
SAM9N12/SAM9CN11/SAM9CN12 [DATASHEET]
11063K–ATARM–05-Nov-13
Figure 31-16. Burst Read Access, Latency = 2, SDR-SDRAM Devices
31.5.3 Refresh
(Auto-refresh
Command)
An auto-refresh command is used to refresh the DDRSDRC. Refresh addresses are generated internally by the SDRAM
device and incremented after each auto-refresh automatically. The DDRSDRC generates these auto-refresh commands
periodically. A timer is loaded with the value in the register DDRSDRC_TR that indicates the number of clock cycles
between refresh cycles. When the DDRSDRC initiates a refresh of an SDRAM device, internal memory accesses are not
delayed. However, if the CPU tries to access the SDRAM device, the slave indicates that the device is busy. A request of
refresh does not interrupt a burst transfer in progress.
device and incremented after each auto-refresh automatically. The DDRSDRC generates these auto-refresh commands
periodically. A timer is loaded with the value in the register DDRSDRC_TR that indicates the number of clock cycles
between refresh cycles. When the DDRSDRC initiates a refresh of an SDRAM device, internal memory accesses are not
delayed. However, if the CPU tries to access the SDRAM device, the slave indicates that the device is busy. A request of
refresh does not interrupt a burst transfer in progress.
31.5.4 Power
Management
31.5.4.1 Self-refresh Mode
This mode is activated by setting low-power command bit (LPCB) to ‘1’ in
.
Self-refresh mode is used to reduce power consumption, i.e., when no access to the SDRAM device is possible. In this
case, power consumption is very low. In self-refresh mode, the SDRAM device retains data without external clocking and
provides its own internal clocking, thus performing its own auto-refresh cycles. All the inputs to the SDRAM device
become “don’t care” except CKE, which remains low. As soon as the SDRAM device is selected, the DDRSDRC
provides a sequence of commands and exits self-refresh mode.
case, power consumption is very low. In self-refresh mode, the SDRAM device retains data without external clocking and
provides its own internal clocking, thus performing its own auto-refresh cycles. All the inputs to the SDRAM device
become “don’t care” except CKE, which remains low. As soon as the SDRAM device is selected, the DDRSDRC
provides a sequence of commands and exits self-refresh mode.
The DDRSDRC re-enables self-refresh mode as soon as the SDRAM device is not selected. It is possible to define when
self-refresh mode will be enabled by setting the register LPR (see
self-refresh mode will be enabled by setting the register LPR (see
0 = Self-refresh mode is enabled as soon as the SDRAM device is not selected
1 = Self-refresh mode is enabled 64 clock cycles after completion of the last access
2 = Self-refresh mode is enabled 128 clock cycles after completion of the last access
As soon as the SDRAM device is no longer selected, PRECHARGE ALL BANKS command is generated followed by a
SELF-REFREFSH command. If, between these two commands an SDRAM access is detected, SELF-REFREFSH
command will be replaced by an AUTO-REFRESH command. According to the application, more AUTO-REFRESH
commands will be performed when the self-refresh mode is enabled during the application.
SELF-REFREFSH command. If, between these two commands an SDRAM access is detected, SELF-REFREFSH
command will be replaced by an AUTO-REFRESH command. According to the application, more AUTO-REFRESH
commands will be performed when the self-refresh mode is enabled during the application.
This controller also interfaces low-power SDRAM. These devices add a new feature: A single quarter, one half quarter or
all banks of the SDRAM array can be enabled in self-refresh mode. Disabled banks will be not refreshed in self-refresh
mode. This feature permits to reduce the self-refresh current. The extended mode register controls this feature, it
includes Temperature Compensated Self Refresh (TSCR), Partial Array Self Refresh (PASR) parameters and Drive
Strength (DS). These parameters are set during the initialization phase. After initialization, as soon as PASR/DS/TSR
fields are modified, the Extended Mode Register in the memory of the external device is accessed automatically and
all banks of the SDRAM array can be enabled in self-refresh mode. Disabled banks will be not refreshed in self-refresh
mode. This feature permits to reduce the self-refresh current. The extended mode register controls this feature, it
includes Temperature Compensated Self Refresh (TSCR), Partial Array Self Refresh (PASR) parameters and Drive
Strength (DS). These parameters are set during the initialization phase. After initialization, as soon as PASR/DS/TSR
fields are modified, the Extended Mode Register in the memory of the external device is accessed automatically and
Latency = 2
SDCLK
col a
A[12:0]
NOP
READ
NOP
BST
NOP
COMMAND
0
BA[1:0]
DaDb
DcDd
DeDf
Dg Dh
D[31:0]
F
DM[3:0]
DQS[1:0]