Intel N450 AU80610004653AA User Manual

Datasheet

9

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One channel of DDR2 memory (consists of 64-bit of data lines):

— Maximum of two SO-DIMMs in Raw Card-A or Raw Card-C format

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Memory DDR2 data transfer rates of 667 MT/s

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I/O Voltage of 1.8 V for DDR2

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Non-ECC, unbuffered DDR2 SO-DIMMs only

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512-Mb, 1-Gb and 2-Gb DDR2 DRAM technologies supported

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Maximum of 2-GB memory capacity supported

— Maximum 1-GB memory capacity on one SO-DIMM or Memory Down

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Memory organizations:

— Two SO-DIMMs

— One SO-DIMM only

— One SO-DIMM and One Memory Down (based on simulations only)

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Up to 32 simultaneous open pages (assuming 4 Ranks of 8 Bank Devices)

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Partial Writes to memory using Data Mask signals (DM)

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On-Die Termination (ODT)

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Intel® Fast Memory Access (Intel FMA)

— Just-in-Time Command Scheduling

— Command Overlap

— Out-of-Order Scheduling

— Opportunistic Writes

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Support memory thermal management scheme to selectively manage reads and/or 
writes. Memory thermal management can be triggered by either on-die thermal 
sensor, or by preset limits. Management limits are determined by weighted sum of 
various commands that are scheduled on the memory interface.

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Compliant to Direct Media Interface (DMI)

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Support 2 lanes in each direction, point-to-point DMI interface to the chipset

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Raw bit-rate on the data pins of 2.5Gb/s, resulting in a real bandwidth per pair of 
250MB/s given the 8b/10b encoding used to transmit data across this interface. 
Does not account for packet overhead and link maintenance

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Maximum theoretical bandwidth on interface of 500MB/s in each direction 
simultaneously, for an aggregate of 1GB/s for the interface