Kingston Technology 256MB, RIMM 184-PIN, RDRAM, ECC KVR1066X36-8/256 Data Sheet

a. see Direct RDRAM datasheet for more details

a. Actual power will depend on individual RDRAM component specifications, memory controller and usage patterns. Please refer

to specific RIMM module vendor data sheets for additional information. Power does not include Refresh Current. Max current com-
puted for x16 256Mb RDRAM components. x18 288Mb RDRAM components use 8 mA more current per RDRAM device in Read
and 60mA more current per RDRAM device in Write.

V

I,ABS

Voltage applied to any RSL or CMOS signal pad with respect to

Gnd

- 0.3

V

DD

+ 0.3

V

V

DD,ABS

Voltage on VDD with respect to Gnd

- 0.5

V

DD

+ 1.0

V

T

STORE

Storage temperature

- 50

100

°C

V

DD

Supply voltage 

a

2.50 - 0.13

2.50 + 0.13

V

V

CMOS

CMOS I/O power supply at pad for 2.5V controllers:

CMOS I/O power supply at pad for 1.8V controllers:

VDD

1.8 - 0.1

VDD

1.8 + 0.2

V

V

V

REF

Reference voltage 

a

1.4 - 0.2

1.4 + 0.2

V

SVdd

Serial Presence Detector- positive power supply

2.2

3.6V

V

TERM

Termination Voltage

1.8 - 0.09

1.8 + 0.09

V

V

TERM

-V

REF

Nominal RSL signal half swing

-

0.46V

I

DD1

One RDRAM device per channel in Read 

b 

, balance in NAP mode

1161

1144

mA

I

DD2

One RDRAM device per channel in Read 

b 

, balance in Standby mode

1740

1336mA

I

DD3

One RDRAM device per channel in Read 

b 

, balance in Active mode

2022

1430

mA

I

DD4

1176116

0

mA

I

DD5

2160

1756

mA

I

DD6

2630

2038

mA

Kingston Technology

Document No. VALUERAM0257-001.A00

Page 8

One RDRAM device per channel in Write

 

, balance in NAP mode

One RDRAM device per channel in Write

 

, balance in Standby mode

One RDRAM device per channel in Write

 

, balance in Active mode