Kingston Technology 256MB, RIMM 184-PIN, RDRAM, ECC KVR1066X36-8/256 Data Sheet
Product codes
KVR1066X36-8/256
b. I/O current is a function of the % of 1s, to add I/O power for 50% 1s for a X16 need to add 257mA or 290mA for X18 ECC mod-
ule for the following: V
ule for the following: V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
- 0.5V.
a. Specifications apply per channel
b. T
b. T
PD
or Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM, CTMN, CFM, and CFMN)
c. If the module meets the following specification,
it is compliant to the specification. If the module does not meet these specifications,
the
specification can be adjusted by the Adjusted
DT
PD
Specification tabl e
AC Electrical Specifications
Symbol
Parameter and Conditions:
128MB and 256MB Modules
128MB and 256MB Modules
Min
Typ
Max
Unit
Z
L
Module Impedance of RSL Signals
25.2
28.0
W
Z
UL-CMOS
Module Impedance of SCK and CMD signals
23.8
28.0
W
T
PD
Average clock delay from finger to finger of all RSL clock nets
(CTM, CTMN, CFM, and CFMN)
(CTM, CTMN, CFM, and CFMN)
-
-
See
Table
b
ps
DT
PD
Propagation delay variation of RSL signals with respect to T
PD
a,c
-21
-
21
ps
DT
PD-CMOS
Propagation delay variation of SCK signal with respect to an aver-
age clock delay
age clock delay
a
-250
-
250
ps
DT
PD-SCK,CMD
Propagation delay variation of CMD signal with respect to SCK
signal
signal
-200
-
200
ps
V
a
/V
IN
Attenuation Limit
-
-
17.0
%
V
XF
/V
IN
Forward crosstalk coefficient (300ps input rise time @ 20%-80%)
-
-
4.0
%
V
XB
/V
IN
Backward crosstalk coefficient (300ps input rise time @ 20%-80%)
-
-
2.0
%
R
DC
DC Resistance Limit
-
-
0.8
W
RIMM Modules T
PD
Specification
Symbol
RIMM Module Capacity:
No. of 256/288Mb RDRAMs:
256MB
8
128MB
4
Unit
Parameter and Condition for -800 & -1066
RIMM modules
RIMM modules
Max
T
PD
Propagation delay per channel, all RSL signals
0.89
ns
Adjusted
DT
PD
Specification
Symbol
Parameter and Conditions
Adjusted Min/Max
Absolute
Min / Max
Unit
DT
PD
Propagation delay variation of RSL signals with
respect to T
respect to T
PD
for 4, 8, and 16 device modules
+/-[17+(18*(N/2) * DZ0)]
a
-30
30
ps
a. Where:
N = Number of RDRAM devices installed on the RIMM module
DZ0 = delta Z0% = (max Z0 - min Z0)/(min Z0)
(max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)
DZ0 = delta Z0% = (max Z0 - min Z0)/(min Z0)
(max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)
Kingston Technology
Document No. VALUERAM0257-001.A00
Page 9
30.8
32.2
Max
1.02