STMicroelectronics M93C66-WMN6P Memory IC M93C66-WMN6P Data Sheet
Product codes
M93C66-WMN6P
DC and AC parameters
M93C86-x M93C76-R M93C66-x M93C56-x M93C46-x
DocID4997 Rev 15
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device.
characteristics of the device.
Table 8. Operating conditions (M93Cx6-W)
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply voltage
2.5
5.5
V
T
A
Ambient operating temperature
–40
85
°C
Table 9. Operating conditions (M93Cx6-R)
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply voltage
1.8
5.5
V
T
A
Ambient operating temperature
–40
85
°C
Table 10. Cycling performance
(1)
1. Cycling performance for products identified by process letter K.
Symbol
Parameter
Test conditions
Min.
Max.
Unit
Ncycle
Write cycle endurance
TA
25 °C,
V
CC
(min) < V
CC
< V
CC
(max)
-
4,000,000
Write cycle
TA = 85 °C,
V
V
CC
(min) < V
CC
< V
CC
(max)
-
1,200,000
Table 11. Memory cell data retention
(1)
1. For products identified by process letter K. The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
Parameter
Test conditions
Min.
Unit
Data retention
TA = 55 °C
200
Year