Hitachi Microscope & Magnifier S-3400N User Manual

1.1.1 

1 - 1 

1.  SPECIFICATIONS AND INSTALLATION REQUIREMENTS 

1.1  Specifications 
 
1.1.1  Resolution 
 
Secondary electron image resolution: 

  3.0 nm (30 kV acceleration voltage, in high vacuum 

mode) 

 

  10 nm (3 kV acceleration voltage, in high vacuum 

mode) 

Backscattered electron image resolution:  4.0 nm (30 kV acceleration voltage, in low vacuum 

mode) 

 
 
1.1.2  Magnification 
 
5x to 300,000x 
(Highest and lowest magnifications are dependent upon accelerating voltage, WD and scan 
speed.) 
 
 
1.1.3  Electron Optical System 
 
Electron source: 

Pre-centered cartridge type tungsten 

 hairpin 

filament 

Acceleration voltage: 

0.3 kV to 30 kV 

Gun bias: 

Quad-/self-bias switching and continuously variable fixed bias 

Beam alignment: 

Electromagnetic two-stage deflection (doubles as blanking when the 
image is frozen) 

Lens system: 

Three-stage electromagnetic lens reduction optical system 

Stigma correcting unit: 

Electromagnetic 8-pole XY method 

Scanning coil: 

Two-stage electromagnetic deflection method 

Movable objective aperture: Four-hole movable aperture (30, 50, 80, and 150 µm) 
Image shift: 

± 50 µm or greater (WD = 10 mm) 

X-ray analysis position: 

WD =10 mm, X-ray take-out angle (TOA) = 35° 

Detector and image types:  Secondary electron detector; secondary electron image (high 

vacuum mode) 

 

Quad-type semiconductor backscattered electron detector; 
backscattered electron image (High/low vacuum mode)