Atmel SAM4S-XPLD Atmel ATSAM4S-XPLD ATSAM4S-XPLD Hoja De Datos
Los códigos de productos
ATSAM4S-XPLD
318
SAM4S [DATASHEET]
11100E–ATARM–24-Jul-13
For example, if the third bit of the first word read in the EEFC_FRR is set, then the third lock region is locked.
One error can be detected in the EEFC_FSR register after a programming sequence:
Command Error: a bad keyword has been written in the EEFC_FCR register.
Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash memory has failed.
Note:
Access to the Flash in read is permitted when a set, clear or get lock bit command is performed.
20.4.3.5 GPNVM Bit
GPNVM bits do not interfere with the embedded Flash memory plane. Refer to specific product details for information on
GPNVM bit action.
GPNVM bit action.
The set GPNVM bit sequence is:
Start the Set GPNVM Bit command (SGPB) by writing the Flash Command Register with the SGPB command and
the number of the GPNVM bit to be set.
the number of the GPNVM bit to be set.
When the GPVNM bit is set, the bit FRDY in the Flash Programming Status Register (EEFC_FSR) rises. If an
interrupt was enabled by setting the FRDY bit in EEFC_FMR, the interrupt line of the NVIC is activated.
interrupt was enabled by setting the FRDY bit in EEFC_FMR, the interrupt line of the NVIC is activated.
If the GPNVM bit number is greater than the total number of GPNVM bits, then the command has no effect. The
result of the SGPB command can be checked by running a GGPB (Get GPNVM Bit) command.
result of the SGPB command can be checked by running a GGPB (Get GPNVM Bit) command.
One error can be detected in the EEFC_FSR register after a programming sequence:
Command Error: a bad keyword has been written in the EEFC_FCR register.
Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash memory has failed.
It is possible to clear GPNVM bits previously set. The clear GPNVM bit sequence is:
Start the Clear GPNVM Bit command (CGPB) by writing the Flash Command Register with CGPB and the number
of the GPNVM bit to be cleared.
of the GPNVM bit to be cleared.
When the clear completes, the FRDY bit in the Flash Programming Status Register (EEFC_FSR) rises. If an
interrupt has been enabled by setting the FRDY bit in EEFC_FMR, the interrupt line of the NVIC is activated.
interrupt has been enabled by setting the FRDY bit in EEFC_FMR, the interrupt line of the NVIC is activated.
If the GPNVM bit number is greater than the total number of GPNVM bits, then the command has no effect.
One error can be detected in the EEFC_FSR register after a programming sequence:
Command Error: a bad keyword has been written in the EEFC_FCR register.
Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash memory has failed.
The status of GPNVM bits can be returned by the Enhanced Embedded Flash Controller (EEFC). The sequence is:
Start the Get GPNVM bit command by writing the Flash Command Register with GGPB. The FARG field is
meaningless.
meaningless.
GPNVM bits can be read by the software application in the EEFC_FRR register. The first word read corresponds
to the 32 first GPNVM bits, following reads provide the next 32 GPNVM bits as long as it is meaningful. Extra reads
to the EEFC_FRR register return 0.
to the 32 first GPNVM bits, following reads provide the next 32 GPNVM bits as long as it is meaningful. Extra reads
to the EEFC_FRR register return 0.
For example, if the third bit of the first word read in the EEFC_FRR is set, then the third GPNVM bit is active.
One error can be detected in the EEFC_FSR register after a programming sequence:
Command Error: a bad keyword has been written in the EEFC_FCR register.
Note:
Access to the Flash in read is permitted when a set, clear or get GPNVM bit command is performed.
Note:
If GPNVM bit number is greater than the maximum number of GPNVM available in the product, the command
has no effect on Flash and a Flash error can occur.
has no effect on Flash and a Flash error can occur.