Nxp Semiconductors LPC2917 ユーザーズマニュアル

LPC2917_19_1

© NXP B.V. 2007. All rights reserved.

[1]

Based on package heat transfer, not device power consumption.

[2]

Peak current must be limited at 25 times average current.

[3]

For I/O Port 0, the maximum input voltage is defined by V

I(ADC)

.

[4]

Only when V

DD(IO)

 is present.

[5]

Note that pull-up should be off. With pull-up do not exceed 3.6 V.

[6]

In accordance with IEC 60747-1. An alternative definition of the virtual junction temperature is: T

vj

= T

amb

+ P

tot

× R

th(j-a)

 where R

th(j-a)

 is 

a fixed value; see 

. The rating for T

vj

 limits the allowable combinations of power dissipation and ambient temperature.

[7]

Human-body model: discharging a 100 pF capacitor via a 10 k

Ω series resistor.

[8]

Machine model: discharging a 200 pF capacitor via a 0.75

μH series inductance and 10 Ω resistor.

[9]

112 mA per V

DD(IO)

 or V

SS(IO)

 should not be exceeded.

 

I

OHS

HIGH-state short-circuit 
output current.

Drive HIGH, output shorted 
to VSS(IO).

-

−33

mA

I

OLS

LOW-state short-circuit 
output current.

Drive LOW, output shorted 
to VDD(IO).

-

+38

mA

T

stg

Storage temperature.

−40

+150

°C

T

amb

Ambient temperature.

−40

+85

°C

T

vj

Virtual junction temperature.

−40

+125

°C

n

endu(fl)

Endurance of flash memory.

-

100 000

cycle

t

ret(fl)

Flash memory retention 
time.

-

20

year

V

esd

Electrostatic discharge 
voltage.

On all pins.

Human body model.

−2000

+2000

V

Machine model.

−200

+200

V

Charged device model.

−500

+500

V

On corner pins.

Charged device model.

-750

+750

V

R

th(j-a)

thermal resistance from 
junction to ambient

in free air

package;

LQFP144

62

K/W