Техническая Спецификация для Fairchild Semiconductor N/A MJE340STU
Модели
MJE340STU
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
340
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
300
V
V
CEO
Collector-Emitter Voltage
300
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
500
mA
P
C
Collector Dissipation (T
C
=25
°
C)
20
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0
300
V
I
CBO
Collector Cut-off Current
V
CB
= 300V, I
E
=0
100
µ
A
I
EBO
Emitter Cut-off Current
V
BE
= 3V, I
C
= 0
100
µ
A
h
FE
DC Current Gain
V
CE
= 10V, I
C
= 50mA
30
240
MJE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
• Suitable for Transformer
• Complement to MJE350
1
TO-126
1. Emitter 2.Collector 3.Base