Motorola MCF5281 用户手册

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页码 816
15-14
MCF5282 User’s Manual
MOTOROLA
 
SDRAM Controller Operation  
the port size of the associated SDRAM. The primary cycle of the transfer generates the
ACTV
 and 
READ
 or 
WRITE
 commands; secondary cycles generate only 
READ
 or 
WRITE
commands. As soon as the transfer completes, the 
PALL
 command is generated to prepare
for the next access.
Note that in synchronous operation, burst mode and address incrementing during burst
cycles are controlled by the MCF5282 DRAM controller. Thus, instead of the SDRAM
enabling its internal burst incrementing capability, the MCF5282 controls this function.
This means that the burst function that is enabled in the mode register of SDRAMs must be
disabled when interfacing to the MCF5282.
Figure 15-6 shows a burst read operation. In this example, DACR[CASL] = 01 for an
SRAS-to-SCAS delay (t
RCD
) of 2 system clock cycles. Because t
RCD 
is equal to the read
CAS latency (SCAS assertion to data out), this value is also 2 system clock cycles. Notice
that 
NOP
s are executed until the last data is read. A 
PALL
 command is executed one cycle
after the last data transfer.
Figure 15-6. Burst Read SDRAM Access
Figure 15-7 shows the burst write operation. In this example, DACR[CASL] = 01, which
creates an SRAS-to-SCAS delay (t
RCD
) of 2 system clock cycles. Note that data is available
upon SCAS assertion and a burst write cycle completes two cycles sooner than a burst read
cycle with the same t
RCD. 
The next bus cycle is initiated sooner, but cannot begin an
SDRAM cycle until the precharge-to-
ACTV
 delay completes.
A[31:0]
SRAS
SCAS
DRAMW
D[31:0]
t
CASL
 = 2
ACTV
READ
NOP
NOP
SDRAM_CS[0] or [1]
BS[3:0]
NOP
PALL
Row
Column
Column
Column
Column
t
RCD
 = 2
t
EP
CLKOUT
READ
READ
READ