Motorola MCF5281 用户手册

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页码 816
15-16
MCF5282 User’s Manual
MOTOROLA
 
SDRAM Controller Operation  
request flag. This refresh cycle includes a delay from any precharge to the auto-refresh
command, the auto-refresh command, and then a delay until any 
ACTV
 command is
allowed. Any SDRAM access initiated during the auto-refresh cycle is delayed until the
cycle is completed.
Figure 15-8 shows the auto-refresh timing. In this case, there is an SDRAM access when
the refresh request becomes active. The request is delayed by the precharge to 
ACTV
 delay
programmed into the active SDRAM bank by the CAS bits. The 
REF
 command is then
generated and the delay required by DCR[RTIM] is inserted before the next 
ACTV
command is generated. In this example, the next bus cycle is initiated, but does not generate
an SDRAM access until T
RC
 is finished. Because both chip selects are active during the 
REF
command, it is passed to both blocks of external SDRAM.
Figure 15-8. Auto-Refresh Operation
15.2.3.6 Self-Refresh Operation
Self-refresh is a method of allowing the SDRAM to enter into a low-power state, while at
the same time to perform an internal refresh operation and to maintain the integrity of the
data stored in the SDRAM. The DRAM controller supports self-refresh with DCR[IS].
When IS is set, the 
SELF
 command is sent to the SDRAM. When IS is cleared, the 
SELFX
command is sent to the DRAM controller. Figure 15-9 shows the self-refresh operation. 
A[31:0]
SRAS
SCAS
DRAMW
PALL
SDRAM_CS[0] or [1]
REF
ACTV
t
RCD
 = 2
t
RC 
= 6
CLKOUT