Atmel ARM-Based Evaluation Kit AT91SAM9N12-EK AT91SAM9N12-EK Data Sheet

Product codes
AT91SAM9N12-EK
Page of 1104
1051
SAM9N12/SAM9CN11/SAM9CN12 [DATASHEET]
11063K–ATARM–05-Nov-13
48.6.1  32 kHz Crystal Characteristics
48.6.2  XIN32 Clock Characteristics
Note:
1. These characteristics apply only when the 32.768KHz Oscillator is in bypass mode (i.e. when RCEN = 0, OSC32EN = 
0, OSCSEL = 1 and OSC32BYP = 1) in the SCKCR register. 
See “Slow Clock Selection” in the PMC section.
48.7
32 kHz RC Oscillator Characteristics 
Table 48-12. 32 kHz Crystal Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ESR
Equivalent Series Resistor Rs
Crystal @ 32.768 kHz
50
100
k
Ω
C
M
Motional Capacitance
Crystal @ 32.768 kHz
0.6
3
fF
C
S
Shunt Capacitance
Crystal @ 32.768 kHz
0.6
2
pF
I
DD ON
Current dissipation
R
S
 = 50 k
Ω
 C
CRYSTAL32 
= 6 pF
0.55
1.3
µA
R
S
 = 50 k
Ω
 C
CRYSTAL32 
= 12.5pF
0.85
1.6
µA
R
S
 = 100 k
Ω
 C
CRYSTAL32 
= 6 pF
0.7
2.0
µA
R
S
 = 100 k
Ω
 C
CRYSTAL32 
= 12.5 pF
1.1
2.2
µA
I
DD STDBY
Standby consumption
0.3
µA
Table 48-13. XIN32 Clock Electrical Characteristics
Symbol
Parameter
Conditions
Min
Max
Units
1/(t
CPXIN32
)
XIN32 Clock Frequency
44
kHz
t
CPXIN32
XIN32 Clock Period
22
µs
t
CHXIN32
XIN32 Clock High Half-period
11
µs
t
CLXIN32
XIN32 Clock Low Half-period
11
µs
t
CLCH32
XIN32 Clock Rise time
400
ns
t
CLCL32
XIN32 Clock Fall time
400
ns
C
IN32
XIN32 Input Capacitance
6
pF
R
IN32
XIN32 Pull-down Resistor
4
M
Ω
V
IN32
XIN32 Voltage
VDDBU
VDDBU
V
V
INIL32
XIN32 Input Low Level Voltage
-0.3
0.3 x V
VDDBU
V
V
INIH32
XIN32 Input High Level Voltage
0.7 x V
VDDBU
V
VDDBU
 + 0.3
V
Table 48-14. RC Oscillator Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1/(t
CPRCz
)
Crystal Oscillator Frequency
20
32
44
kHz
Duty Cycle
45
55
%
t
ST
Startup Time
75
µs
I
DD ON
Power Consumption Oscillation
After startup time
1.1
2.1
µA
I
DD STDBY
Standby consumption
0.4
µA