Samsung 1GB 400MHz DDR M368L2923DUN-CCC 전단
제품 코드
M368L2923DUN-CCC
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 0.1 June 2005
(V
DD
=2.7V, T = 10
°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Unit
Notes
IDD0
480
420
mA
IDD1
640
560
mA
IDD2P
20
20
mA
IDD2F
120
120
mA
IDD2Q
100
100
mA
IDD3P
180
120
mA
IDD3N
240
180
mA
IDD4R
760
680
mA
IDD4W
860
740
mA
IDD5
880
820
mA
IDD6
Normal
20
20
mA
Low power
12
12
mA
Optional
IDD7A
1,600
1,520
mA
(V
DD
=2.7V, T = 10
°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Unit
Notes
IDD0
960
840
mA
IDD1
1,200
1,080
mA
IDD2P
40
40
mA
IDD2F
240
240
mA
IDD2Q
200
200
mA
IDD3P
360
240
mA
IDD3N
480
360
mA
IDD4R
1,240
1,120
mA
IDD4W
1,400
1,200
mA
IDD5
1,760
1,640
mA
IDD6
Normal
40
40
mA
Low power
24
24
mA
Optional
IDD7A
3,080
2,880
mA
9.1 M368L3324DUS [ (32M x 16) * 4, 256MB Non ECC Module ]
9.2 M368L6523DUS [ (64M x 8) * 8, 512MB Non ECC Module ]
9.0 DDR SDRAM IDD spec table