Samsung 1GB 400MHz DDR M368L2923DUN-CCC 전단
제품 코드
M368L2923DUN-CCC
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 0.1 June 2005
(V
DD
=2.7V, T = 10
°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B0(DDR333@CL=2.5)
Unit
Notes
IDD0
1,080
950
mA
IDD1
1,350
1,220
mA
IDD2P
45
45
mA
IDD2F
270
270
mA
IDD2Q
230
230
mA
IDD3P
410
270
mA
IDD3N
540
410
mA
IDD4R
1,400
1,260
mA
IDD4W
1,580
1,350
mA
IDD5
1,980
1,850
mA
IDD6
Normal
45
45
mA
Low power
27
27
mA
Optional
IDD7A
3,470
3,240
mA
(V
DD
=2.7V, T = 10
°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B0(DDR333@CL=2.5)
Unit
Notes
IDD0
1,440
1,200
mA
IDD1
1,680
1,440
mA
IDD2P
80
80
mA
IDD2F
480
480
mA
IDD2Q
400
400
mA
IDD3P
720
480
mA
IDD3N
960
720
mA
IDD4R
1,720
1,480
mA
IDD4W
1,880
1,560
mA
IDD5
2,240
2,000
mA
IDD6
Normal
80
80
mA
Low power
48
48
mA
Optional
IDD7A
3,560
3,240
mA
9.4 M368L2923DUN [ (64M x 8) * 16, 1GB Non ECC Module ]
9.3 M381L6523DUM [ (64M x 8) * 9, 512MB ECC Module ]