Техническая Спецификация для Fairchild Semiconductor N/A FMMT549
Модели
FMMT549
FMMT549 — PNP Lo
w Sa
turation T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FMMT549 Rev. C1
1
August 2009
FMMT549
PNP Low Saturation Transistor
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continuous.
•
Sourced from process PB.
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
Thermal Characteristics*
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in
2
of 2 oz copper.
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage
-30
V
V
CBO
Collector-Base Voltage
-35
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current - Continuous
- Peak Pulse Current
- Peak Pulse Current
-1
-2
-2
A
A
A
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to +150
°C
Symbol
Parameter
Value
Unit
P
D
Total Device Dissipation, by R
θJA
Derate above 25
°C
500
4
mW
mW/
°C
R
θJA
Thermal Resistance, Junction to Ambient
250
°C/W
1. Base 2. Emitter 3. Collector
SuperSOT-23
Marking : 549
1
2
3